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C4F6 / Hexafluoro-1,3-butadiene / Electronic gas

Hexafluoro-1,3-butadiene (C4F6) is an environmentally friendly dry etching gas with low GWP,
high etching rate, high selectivity and high aspect ratio,
showing very high performance for critical plasma etching in semiconductor devices manufacturing.

C4F6 Molecular Structure
· Production Description
Items Specification
Chemical Name Hexafluorocyclobutene
Hexafluoro-1,3-butadiene,
Perfluorobutadiene
Chemical Formula CF2=CF-CF=CF2
CAS NO. C4F6
Molecular weight (g/mol) 685-63-2
ODP 162.03
GWP100 yr 0
Atmospheric lifetime (days) <1
Purity 1.1
C3H2F4  / HFO-1234ze(Z) ≥99.0%

· Packaging Information: 4.64L/10.2L/44L Cylinder
· Typical Physical or Chemical Properties
Attributes Values
Chemical Name Hexafluoro-1
3-butadiene,
Perfluorobutadiene
Boiling point (℃) -6.5
Freezing point (℃) -130
Critical temperature (℃) 139.6
Critical pressure (bar) 31.9
Liquid density (kg/l, @15℃) 1.44
Vapor density (kg/m3, @15℃) 6.8
Vapor pressure (bar, @25℃) 2.11
Heat of vaporization (kJ/kg,@b.p.) 161.8
Explosion limits (%vol) 7-73